Ingram School of Engineering
Member of Technical Staff, Motorola Labs/Freescale Semiconductors (1995-2008)
Postdoctoral Fellow, Arizona State University (1989-1995)
Ph.D Semiconductor Physics, Imperial College, London (1986-1989)
B.Sc Electronic and Communication Engineering, University of Birmingham, UK (1979-1982)
Ravi Droopad obtained his PhD in 1989 at Imperial College of Science, Technology and Medicine, University of London working on the growth of Sb-based narrow gap semiconductors by MBE for far infrared detectors and high speed electronic devices. After his PhD he spent 5 years at Arizona State University as a research scientist developing growth processes for III-V-based high speed optoelectronic device applications including optical modulators and vertical cavity surface emitting lasers. In 1995 he joined Motorola Labs in Tempe where he was responsible for the development of GaAs-based RF device structures used in power amplifiers for mobile applications and the development of alternative gate dielectric for future silicon CMOS devices. Over the past decade he has been working on the integration of epitaxial oxides on semiconductors for multifunctional devices applications. He has been at the forefront in the development of III-V based MOSFET devices and is currently developing compound semiconductors for alternative high mobility channel in Si CMOS devices to address the ITRS requirement beyond the 15 nm technology node.
In 2002 he was elected to the Motorola’s Scientific Advisory Board as an associate member in recognition of creative and innovative technical contributions and in particular “for the development of crystalline oxides and compound semiconductors on silicon”
He was the Engineer of the Year Award for the IEEE Phoenix Section“for contributions towards the development of high mobility MOSFET technology”
In the summer of 2008 he joined the department of Physics at Texas State University in San Marcos. His current research includes the development of novel materials systems using molecular beam epitaxy for future optoelectronic, multifunctional devices and energy applications. He has published over 150 refereed journal articles and has 33 patents issued.
My research interests are in the area of growth and characterisation of thin film semiconductor and oxide materials by molecular beam epitaxy, including: compound semiconductor, silicon and oxide/semiconductor heterostructures for increase device functionality, future high speed optoelectronic and MOSFET applications; in-situ characterisation of surfaces and hetero-interfaces using x-ray photoelectron spectroscopy and scanning probe microscopy.