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FEI Helios Nano Lab 400 SEM

FEI Helios NanoLab 400 DualBeam

The FEI Helios NanoLab 400 DualBeam system is a fully digital Field Emission Scanning Electron Microscope (FE‑SEM) equipped with Focused Ion Beam (FIB) technology.  The DualBeam platform is used for sample preparation, imaging and analysis in semiconductor failure analysis, process development, and process control laboratories.

Ultra-high resolution electron optics are capable of 0.9 nm at optimal working distance (15 kV) and 1.0 nm at the DualBeam coincident point and 350 V – 30 kV beam voltage range.

The Sidewinder ion column for FIB combines high-resolution with low voltage performance.  This enables excellent ion image resolution (5 nm @ 30 kV, coincident WD) with 500V-30kV beam voltage range and precise ion milling.  The small beam diameter of the Sidewinder ion column at less than 1 kV enables low-energy, grazing-incidence final clean-up to remove surface damage induced by higher-energy milling.

The Helios NanoLab 400 is equipped with a 5-axis motorized x-y-z-rotate-tilt stage with piezo control of all axes.  Travel along the x and y-axes is 100 mm, the tilt range is -10 to +60 degrees.  The motorized z‑range is 20 mm.  Stage repeatability in x and y directions is 0.5 µm, at 0° and 52° tilt with less than 8 nm drift per minute at tilt.

Additional Capabilities

  • Nabity E-beam Lithography with a 5 MHz Fast Beam Blanker.
  • Energy Dispersive X-ray Spectroscopy (EDS) using a 30 mm2 Silicon Drift Detector (SDD) with less than 133 eV resolution (TEAM EDX with Apollo XL SDD).  In thin samples, the resolution of compositional analysis is 30 nm.
  • Retractable STEM Detector that enables scanning transmission imaging in bright field, dark field, and high-angle dark field modes with a 0.8nm resolution.
  • Retractable vCD - High sensitivity, solid-state backscattered detector.
  • Gas injection systems for Ion or Electron beam deposition of Platinum, Tungsten, Cobalt and Silicon Oxide.

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